@InProceedings{NakamatsuPeSoOkFoRaAb:2017:InTrPr,
               author = "Nakamatsu, Sandra and Peres, Marcelos L. and Soares, Dem{\'e}trio 
                         A. W. and Okassaki, Anderson K. and Fornari, Celso Israel and 
                         Rappl, Paulo Henrique de Oliveira and Abramof, Eduardo",
          affiliation = "{} and {} and {} and {} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)} and {Instituto Nacional de Pesquisas Espaciais 
                         (INPE)} and {Instituto Nacional de Pesquisas Espaciais (INPE)}",
                title = "Investigation of transport properties on PbTe/Pb1-xSnxTe 
                         heterostructures",
            booktitle = "Resumos...",
                 year = "2017",
         organization = "Brazilian Workshop on Semiconductor Physics, 18. (BWSP)",
             abstract = "PbTe compounds have been used for the development of infrared 
                         photodetectors and diode lasers [1] over the decades. Introduction 
                         of Sn atoms makes this material even more interesting for 
                         practical applications as well as from the basics physics point of 
                         view. According to the band inversion model, the gap of Pb1-xSnxTe 
                         decreases as Sn composition increases, and vanishes for an 
                         intermediate alloy composition. Further increasing of Sn 
                         concentration leads to the band inversion and the energy gap 
                         starts to increase up to the SnTe value. Very recently, it was 
                         discovered that in the region of band inversion, transition from 
                         metallic to crystalline topological insulator (TCI) occurs [3]. 
                         Recent theoretical work demonstrated that the PbTe/Pb1-xSnxTe 
                         heterostructures can present topological states in the interface 
                         of the heterojunction. Such an interface of PbTe and 
                         Pb1\−xSnxTe, at which four Dirac cones appear, is analogous 
                         to the surface of a weak TI [4]. In this work we perform 
                         electrical characterization in PbTe/Pb1-xSnxTe films for different 
                         values of x close to the band inversion in order to verify the 
                         existence a single gapless helical state in the [111] direction at 
                         the heterostructure interface. Morfological characterization will 
                         also be performed in order to provide a detailed view of these new 
                         structures. We hope that this work contribute to a better 
                         comprehension of the nature of topological insulators based on 
                         IV-VI compounds. Acknowledgments: The authors would like to 
                         acknowledge CAPES and FAPEMIG for support. References: [1] I. U. 
                         Arachchige and M. G. Kanatzidis, Nano Lett. 9 (4), 1583 (2009); 
                         [2] R. Jaramillo et al, Jour. Appl. Phys. 119, 035101 (2016); [3] 
                         P. Dziawa, Nature Materials 11, 1023 (2012).",
  conference-location = "Maresias, SP",
      conference-year = "14-18 ago.",
             language = "en",
           targetfile = "abramof_investigation.pdf",
        urlaccessdate = "27 abr. 2024"
}